Kumar, Nitish ; Patterson, Eric A. ; Frömling, Till ; Cann, David P. (2016)
DC-bias dependent impedance spectroscopy
of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics.
In: Journal of Materials Chemistry C, 4
doi: 10.1039/c5tc04247j
Article, Bibliographie
Abstract
This report discusses the voltage-stability of the dielectric and transport properties of BaTiO3–Bi(Zn1/2Ti1/2)O3 (BT–BZT) ceramics which have shown excellent properties for emerging energy applications. For p-type BaTiO3, the ceramics deviated from Ohm’s law behavior at very low voltage levels along with a reversible drop in bulk resistivity by several orders of magnitude starting at bias fields as low as 0.1 kV cm^-1 (~8 V). In contrast, n-type BT–BZT ceramics exhibited a small (i.e. less than one order of magnitude) increase in resistivity on application of small field levels. These data indicate a hole-generation mechanism which becomes active at a low voltage threshold. The bulk capacitance values calculated using AC impedance spectroscopy, however, were relatively unaffected (<15% change) by this application of a DC bias (up to ~0.25 kV cm^-1). These findings provide important insights into the electric transport mechanisms in BT-based ceramics.
| Item Type: | Article |
|---|---|
| Erschienen: | 2016 |
| Creators: | Kumar, Nitish ; Patterson, Eric A. ; Frömling, Till ; Cann, David P. |
| Type of entry: | Bibliographie |
| Title: | DC-bias dependent impedance spectroscopy of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics |
| Language: | English |
| Date: | 2 March 2016 |
| Publisher: | RSC Publishing |
| Journal or Publication Title: | Journal of Materials Chemistry C |
| Volume of the journal: | 4 |
| DOI: | 10.1039/c5tc04247j |
| URL / URN: | http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C5TC04... |
| Abstract: | This report discusses the voltage-stability of the dielectric and transport properties of BaTiO3–Bi(Zn1/2Ti1/2)O3 (BT–BZT) ceramics which have shown excellent properties for emerging energy applications. For p-type BaTiO3, the ceramics deviated from Ohm’s law behavior at very low voltage levels along with a reversible drop in bulk resistivity by several orders of magnitude starting at bias fields as low as 0.1 kV cm^-1 (~8 V). In contrast, n-type BT–BZT ceramics exhibited a small (i.e. less than one order of magnitude) increase in resistivity on application of small field levels. These data indicate a hole-generation mechanism which becomes active at a low voltage threshold. The bulk capacitance values calculated using AC impedance spectroscopy, however, were relatively unaffected (<15% change) by this application of a DC bias (up to ~0.25 kV cm^-1). These findings provide important insights into the electric transport mechanisms in BT-based ceramics. |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials |
| Date Deposited: | 03 Mar 2016 06:45 |
| Last Modified: | 01 Dec 2017 15:23 |
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