Aurino, P. P. ; Kalabukhov, A. ; Tuzla, N. ; Olsson, E. ; Klein, Andreas ; Erhart, P. ; Boikov, Y. A. ; Serenkov, I. T. ; Sakharov, V. I. ; Claeson, T. ; Winkler, D. (2015)
Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces.
In: Physical Review B, 92 (15)
doi: 10.1103/PhysRevB.92.155130
Article, Bibliographie
This is the latest version of this item.
Abstract
The conducting state of a quasi-two-dimensional electron gas (q2DEG), formed at the heterointerface between the two wide-bandgap insulators LaAlO3 (LAO) and SrTiO3, can be made completely insulating by low-energy, 150-eV, Ar+ irradiation. The metallic behavior of the interface can be recovered by high-temperature oxygen annealing. The electrical transport properties of the recovered q2DEG are exactly the same as before the irradiation. Microstructural investigations confirm that the transition is not due to physical etching or crystal lattice distortion of the LAO film below its critical thickness. They also reveal a correlation between electrical state, LAO film surface amorphization, and argon ion implantation. The experimental results are in agreement with density functional theory calculations of Ar implantation and migration in the LAO film. This suggests that the metal-insulator transition may be caused by charge trapping in the defect amorphous layer created during the ion irradiation.
| Item Type: | Article |
|---|---|
| Erschienen: | 2015 |
| Creators: | Aurino, P. P. ; Kalabukhov, A. ; Tuzla, N. ; Olsson, E. ; Klein, Andreas ; Erhart, P. ; Boikov, Y. A. ; Serenkov, I. T. ; Sakharov, V. I. ; Claeson, T. ; Winkler, D. |
| Type of entry: | Bibliographie |
| Title: | Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces |
| Language: | English |
| Date: | 2015 |
| Journal or Publication Title: | Physical Review B |
| Volume of the journal: | 92 |
| Issue Number: | 15 |
| DOI: | 10.1103/PhysRevB.92.155130 |
| Corresponding Links: | |
| Abstract: | The conducting state of a quasi-two-dimensional electron gas (q2DEG), formed at the heterointerface between the two wide-bandgap insulators LaAlO3 (LAO) and SrTiO3, can be made completely insulating by low-energy, 150-eV, Ar+ irradiation. The metallic behavior of the interface can be recovered by high-temperature oxygen annealing. The electrical transport properties of the recovered q2DEG are exactly the same as before the irradiation. Microstructural investigations confirm that the transition is not due to physical etching or crystal lattice distortion of the LAO film below its critical thickness. They also reveal a correlation between electrical state, LAO film surface amorphization, and argon ion implantation. The experimental results are in agreement with density functional theory calculations of Ar implantation and migration in the LAO film. This suggests that the metal-insulator transition may be caused by charge trapping in the defect amorphous layer created during the ion irradiation. |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 15 Nov 2015 15:21 |
| Last Modified: | 03 Jul 2024 02:23 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
Available Versions of this Item
-
Reversible metal-insulator transition of Ar-irradiated LaAlO₃/SrTiO₃ interfaces. (deposited 22 Apr 2022 11:04)
- Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces. (deposited 15 Nov 2015 15:21) [Currently Displayed]
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum