Wiens, A. ; Bengtsson, O. ; Maune, H. ; Sazegar, M. ; Heinrich, W. ; Jakoby, R. (2013)
Thick-film Barium-Strontium-Titantate varactors for RF power transistors.
Microwave Conference (EuMC), 2013 European.
Conference or Workshop Item
Item Type: | Conference or Workshop Item |
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Erschienen: | 2013 |
Creators: | Wiens, A. ; Bengtsson, O. ; Maune, H. ; Sazegar, M. ; Heinrich, W. ; Jakoby, R. |
Type of entry: | Bibliographie |
Title: | Thick-film Barium-Strontium-Titantate varactors for RF power transistors |
Language: | German |
Date: | October 2013 |
Event Title: | Microwave Conference (EuMC), 2013 European |
Uncontrolled Keywords: | barium compounds;gallium compounds;high electron mobility transistors;power transistors;thick film devices;varactors;wide band gap semiconductors;GaN;HEMT;RF power transistors;barium-strontium-titanate based thick-film varactors;gain shift;gallium nitride;large-signal environment;packaged RF power transistor;prematching shunt varactor;small- signal environment;thermal conditions;thermal dependency;thick-film barium-strontium-titantate varactors;tunable pre-matching transistor assembly;varactor bias voltage;Gain;Microwave transistors;Radio frequency;Temperature;Temperature measurement;Transistors;Varactors;BST;ferroelectrics;nonlinear devices;power amplifier |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
Date Deposited: | 08 Dec 2014 13:06 |
Last Modified: | 26 Aug 2018 21:28 |
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