Arnous, M. T. ; Wiens, A. ; Preis, S. ; Maune, H. ; Bathich, K. ; Nikfalazar, M. ; Jakoby, R. ; Boeck, G. (2013)
Load-modulated GaN power amplifier implementing tunable thick film BST components.
Microwave Conference (EuMC), 2013 European.
Conference or Workshop Item, Bibliographie
Item Type: | Conference or Workshop Item |
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Erschienen: | 2013 |
Creators: | Arnous, M. T. ; Wiens, A. ; Preis, S. ; Maune, H. ; Bathich, K. ; Nikfalazar, M. ; Jakoby, R. ; Boeck, G. |
Type of entry: | Bibliographie |
Title: | Load-modulated GaN power amplifier implementing tunable thick film BST components |
Language: | English |
Date: | October 2013 |
Event Title: | Microwave Conference (EuMC), 2013 European |
Uncontrolled Keywords: | III-V semiconductors;UHF power amplifiers;barium compounds;gallium compounds;high electron mobility transistors;semiconductor device breakdown;strontium compounds;varactors;wide band gap semiconductors;π-structure matching topology;BaSrTiO3;GaN;adaptive broadband power amplifier design;back-off output power operation;barium-strontium-titanate components;breakdown voltage;class C power amplifier;commercial GaN HEMT;dynamic load modulation;frequency 1.8 GHz to 2.2 GHz;impedance tunability;load-modulated GaN power amplifier;optimum load impedance;output matching network;tunable thick film BST components;varactors;Broadband communication;Impedance;Power amplifiers;Power generation;Power measurement;Transistors;Voltage measurement;Adaptive matching;BST;GaN HEMT;broadband;dynamic load;efficiency enhancement;ferroelectrics;load modulation;power amplifer;tunable component |
Divisions: | 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
Date Deposited: | 08 Dec 2014 13:06 |
Last Modified: | 28 Sep 2017 07:33 |
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