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Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT). Marrakesh, Morocco (16.-18.12.2013)
Conference or Workshop Item, Bibliographie

Item Type: Conference or Workshop Item
Erschienen: 2013
Creators: Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann
Type of entry: Bibliographie
Title: Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material
Language: English
Date: 18 December 2013
Event Title: 8th International Design and Test Symposium (IDT)
Event Location: Marrakesh, Morocco
Event Dates: 16.-18.12.2013
URL / URN: http://idtsymposium.org/
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 31 Mar 2014 07:32
Last Modified: 31 Mar 2014 07:32
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