Hopper, E. Mitchell ; Zhu, Qimin ; Gassmann, Jürgen ; Klein, Andreas ; Mason, Thomas O. (2013)
Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds.
In: Applied Surface Science, 264
Article
Abstract
The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.
| Item Type: | Article |
|---|---|
| Erschienen: | 2013 |
| Creators: | Hopper, E. Mitchell ; Zhu, Qimin ; Gassmann, Jürgen ; Klein, Andreas ; Mason, Thomas O. |
| Type of entry: | Bibliographie |
| Title: | Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds |
| Language: | English |
| Date: | 1 January 2013 |
| Journal or Publication Title: | Applied Surface Science |
| Volume of the journal: | 264 |
| URL / URN: | http://dx.doi.org/10.1016/j.apsusc.2012.10.143 |
| Abstract: | The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements. |
| Uncontrolled Keywords: | Indium zinc oxide; Photoelectron spectroscopy; Kelvin probe; Ionization potential; Work function |
| Identification Number: | doi:10.1016/j.apsusc.2012.10.143 |
| Additional Information: | SFB 595 D3 |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes 11 Department of Materials and Earth Sciences > Material Science DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue 11 Department of Materials and Earth Sciences Zentrale Einrichtungen DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres DFG-Collaborative Research Centres (incl. Transregio) |
| Date Deposited: | 16 Aug 2013 13:09 |
| Last Modified: | 28 Mar 2015 16:44 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum