Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1149/2.002307jss
| Item Type: | Article |
|---|---|
| Erschienen: | 2013 |
| Creators: | Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann |
| Type of entry: | Bibliographie |
| Title: | CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications |
| Language: | English |
| Date: | 7 May 2013 |
| Journal or Publication Title: | ECS Journal of Solid State Science and Technology |
| Volume of the journal: | 2 |
| Issue Number: | 6 |
| URL / URN: | http://dx.doi.org/10.1149/2.002307jss |
| Additional Information: | 223rd Meeting of the Electrochemical Society, Toronto, Ontario, Canada, 12.-16.05.2013 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 22 May 2013 13:33 |
| Last Modified: | 08 May 2024 08:07 |
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