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Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5)
Article, Bibliographie

Item Type: Article
Erschienen: 2013
Creators: Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann
Type of entry: Bibliographie
Title: Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications
Language: English
Date: 16 May 2013
Journal or Publication Title: ECS Transactions
Volume of the journal: 53
Issue Number: 5
URL / URN: http://dx.doi.org/10.1149/05305.0105ecst
Additional Information:

223rd Meeting of the Electrochemical Society, Toronto, Ontario, Canada, 12.-16.05.2013

Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 21 May 2013 11:44
Last Modified: 08 May 2024 08:06
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