Kayhan, Emine ; Prasad, Ravi Mohan ; Gurlo, Alexander ; Yilmazoglu, Oktay ; Engstler, Jörg ; Ionescu, Emanuel ; Yoon, Songhak ; Weidenkaff, Anke ; Schneider, Jörg J. (2012)
Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene.
In: Chemistry - A European Journal, 18 (47)
doi: 10.1002/chem.201201880
Article, Bibliographie
Abstract
Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.
| Item Type: | Article |
|---|---|
| Erschienen: | 2012 |
| Creators: | Kayhan, Emine ; Prasad, Ravi Mohan ; Gurlo, Alexander ; Yilmazoglu, Oktay ; Engstler, Jörg ; Ionescu, Emanuel ; Yoon, Songhak ; Weidenkaff, Anke ; Schneider, Jörg J. |
| Type of entry: | Bibliographie |
| Title: | Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene |
| Language: | English |
| Date: | 19 November 2012 |
| Publisher: | Wiley |
| Journal or Publication Title: | Chemistry - A European Journal |
| Volume of the journal: | 18 |
| Issue Number: | 47 |
| DOI: | 10.1002/chem.201201880 |
| Abstract: | Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported. |
| Uncontrolled Keywords: | chemical vapor deposition electrical properties, graphene, Raman spectroscopy, sensors |
| Additional Information: | Dedicated to Professor Dr. Dieter Fenske on the occasion of his 70th birthday. |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids 07 Department of Chemistry 07 Department of Chemistry > Eduard Zintl-Institut > Fachgebiet Anorganische Chemie |
| Date Deposited: | 21 Mar 2013 08:15 |
| Last Modified: | 13 Jan 2024 07:03 |
| PPN: | |
| Funders: | TEM measurements were performed at the Ernst-Ruska-Zentrum für Elektronenmikroskopie (ER-C), Jülich, Germany, under the cooperative research program ERC-TUD 01 |
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