Pollakowski, Beatrix ; Hoffmann, Peter ; Kosinova, Marina ; Baake, Olaf ; Trunova, Valentina ; Unterumsberger, Rainer ; Ensinger, Wolfgang ; Beckhoff, Burkhard (2013):
Non-destructive and non-preparative chemical nanometrology of internal material interfaces at tunable high information depths.
In: Analytical Chemistry, 85 (1), pp. 193-200. ACS Publications, ISSN 0003-2700,
[Article]

Abstract

Improved performance of functional nano-scaled devices involve novel materials, more complex structures and advanced technological processes. The transitions to heavier elements and to thicker layers restrict access to the chemical and physical characterization of the internal material interfaces. Conventional non-destructive characterization techniques such as Xray photo-electron spectroscopy suffer from sensitivity and quantification restrictions whereas destructive techniques like ion mass spectrometry may modify the chemical properties of internal interfaces. Thus, novel methods providing sufficient sensitivity, reliable quantification and high information depths to reveal interfacial parameters are needed for R&D challenges on the nano-scale. Measurement strategies adapted to nano-scaled samples enable the combination of Near-Edge X-ray Absorption Fine Structure and Grazing Incidence X-ray Fluorescence to allow for chemical nanometrology of internal material interfaces. Their validation has been performed at nano-layered model structures consisting of a silicon substrate, a physically vapor deposited Ni metal layer and, on top, a chemically vapor deposited BxCyNz light element layer.

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