Balogh, A. G. ; Duvanov, S. M. ; Kurbatov, D. I. ; Opanasyuk, A. S. (2008):
Rutherford backscattering and x-ray diffraction analysis of Ag/ZnS/glass multilayer system.
In: Ukr. Journal of Photoelectronics, 17, pp. 136-140. Odessa Astroprint, [Article]
Abstract
Experimental results on the study of the element depth profiles, structural and roughness properties of Ag/ZnS/glass multilayer system are reported. The ZnS films in this system were obtained by closespaced vacuum sublimation method (CSVS) under different substrate temperature. Examination of layers morphology and structure was performed by optical microscopy with laser interferometry phase shifting and X-ray diffraction method respectively. Element depth profiles and film thickness were studied using energy dispersive X-ray analysis (EDAX), such non-destructive accurate qualitative absolute techniques as Rutherford backscattering spectrometry (RBS) and elastic Backscattering Spectroscopy (BS) of 4He+ and 1H+ ions, respectively. Two temperature ranges where the film growth is going under different mechanism were determined. It was established that ZnS films deposited at 373<Ts<573 Ê have ZB structure. At Ts > 573 Ê the traces of WZ phase are appearing in ZnS films, their amount somewhat increases under increasing the Ts. RBS and BS techniques allow to determine atomic concentration of compound elements and atomic concentration of the element depth distributions. It was shown that thickness averaged stoichiometry of ZnS films were determined by deposition regimes.
| Item Type: | Article |
|---|---|
| Erschienen: | 2008 |
| Creators: | Balogh, A. G. ; Duvanov, S. M. ; Kurbatov, D. I. ; Opanasyuk, A. S. |
| Title: | Rutherford backscattering and x-ray diffraction analysis of Ag/ZnS/glass multilayer system |
| Language: | English |
| Abstract: | Experimental results on the study of the element depth profiles, structural and roughness properties of Ag/ZnS/glass multilayer system are reported. The ZnS films in this system were obtained by closespaced vacuum sublimation method (CSVS) under different substrate temperature. Examination of layers morphology and structure was performed by optical microscopy with laser interferometry phase shifting and X-ray diffraction method respectively. Element depth profiles and film thickness were studied using energy dispersive X-ray analysis (EDAX), such non-destructive accurate qualitative absolute techniques as Rutherford backscattering spectrometry (RBS) and elastic Backscattering Spectroscopy (BS) of 4He+ and 1H+ ions, respectively. Two temperature ranges where the film growth is going under different mechanism were determined. It was established that ZnS films deposited at 373<Ts<573 Ê have ZB structure. At Ts > 573 Ê the traces of WZ phase are appearing in ZnS films, their amount somewhat increases under increasing the Ts. RBS and BS techniques allow to determine atomic concentration of compound elements and atomic concentration of the element depth distributions. It was shown that thickness averaged stoichiometry of ZnS films were determined by deposition regimes. |
| Journal or Publication Title: | Ukr. Journal of Photoelectronics |
| Volume of the journal: | 17 |
| Publisher: | Odessa Astroprint |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Material Analytics 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences |
| Date Deposited: | 10 Dec 2012 08:47 |
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