Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1149/1.3700449
Item Type: | Article |
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Erschienen: | 2012 |
Creators: | Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo |
Type of entry: | Bibliographie |
Title: | Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures |
Language: | English |
Date: | 10 May 2012 |
Journal or Publication Title: | ECS Transactions |
Volume of the journal: | 45 |
Issue Number: | 4 |
URL / URN: | http://dx.doi.org/10.1149/1.3700449 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Date Deposited: | 06 Dec 2012 09:22 |
Last Modified: | 22 May 2013 14:01 |
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