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Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4)
Article, Bibliographie

Item Type: Article
Erschienen: 2012
Creators: Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo
Type of entry: Bibliographie
Title: Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures
Language: English
Date: 10 May 2012
Journal or Publication Title: ECS Transactions
Volume of the journal: 45
Issue Number: 4
URL / URN: http://dx.doi.org/10.1149/1.3700449
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 06 Dec 2012 09:22
Last Modified: 22 May 2013 14:01
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