Chen, Feng ; Klein, Andreas (2012)
Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy.
In: Physical Review B, 86 (9)
Article
Abstract
Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition.
| Item Type: | Article |
|---|---|
| Erschienen: | 2012 |
| Creators: | Chen, Feng ; Klein, Andreas |
| Type of entry: | Bibliographie |
| Title: | Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy |
| Language: | English |
| Date: | 5 September 2012 |
| Publisher: | American Physical Society |
| Journal or Publication Title: | Physical Review B |
| Volume of the journal: | 86 |
| Issue Number: | 9 |
| URL / URN: | http://dx.doi.org/10.1103/PhysRevB.86.094105 |
| Abstract: | Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition. |
| Identification Number: | doi:10.1103/PhysRevB.86.094105 |
| Additional Information: | SFB 595 B7 |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Surface Science DFG-Collaborative Research Centres (incl. Transregio) DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres Zentrale Einrichtungen DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics |
| Date Deposited: | 17 Sep 2012 12:25 |
| Last Modified: | 22 Apr 2022 18:19 |
| PPN: | |
| Funders: | This work was supported by the German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). |
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