Ramakrishnan, P. A. ; Wang, Y. T. ; Balzar, D. ; An, Linan ; Haluschka, C. ; Riedel, R. ; Hermann, A. M. (2001)
Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials.
In: Applied Physics Letters, 78 (20)
doi: 10.1063/1.1370540
Article, Bibliographie
Abstract
The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 –1 cm–1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism.
| Item Type: | Article |
|---|---|
| Erschienen: | 2001 |
| Creators: | Ramakrishnan, P. A. ; Wang, Y. T. ; Balzar, D. ; An, Linan ; Haluschka, C. ; Riedel, R. ; Hermann, A. M. |
| Type of entry: | Bibliographie |
| Title: | Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials |
| Language: | English |
| Date: | 2001 |
| Publisher: | AIP |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 78 |
| Issue Number: | 20 |
| DOI: | 10.1063/1.1370540 |
| Abstract: | The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 –1 cm–1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism. |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences |
| Date Deposited: | 18 May 2012 08:19 |
| Last Modified: | 05 Mar 2013 10:00 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum