Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1016/j.sse.2012.04.017
| Item Type: | Article |
|---|---|
| Erschienen: | 2012 |
| Creators: | Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications |
| Language: | English |
| Date: | 27 April 2012 |
| Journal or Publication Title: | Solid-State Electronics |
| Volume of the journal: | 74 |
| URL / URN: | http://dx.doi.org/10.1016/j.sse.2012.04.017 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 17 Apr 2012 07:59 |
| Last Modified: | 22 May 2013 13:58 |
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