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In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
Spring Meeting & Exhibit 2012 of the Materials Research Society. San Francisco, CA, USA (09.-13.04.2012)
Conference or Workshop Item, Bibliographie

Item Type: Conference or Workshop Item
Erschienen: 2012
Creators: Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo
Type of entry: Bibliographie
Title: In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio
Language: English
Date: 13 April 2012
Event Title: Spring Meeting & Exhibit 2012 of the Materials Research Society
Event Location: San Francisco, CA, USA
Event Dates: 09.-13.04.2012
URL / URN: http://www.mrs.org/s12-program-ee/#tab4
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 17 Apr 2012 06:01
Last Modified: 22 May 2013 14:02
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