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In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77
Article, Bibliographie

Item Type: Article
Erschienen: 2012
Creators: Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo
Type of entry: Bibliographie
Title: In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing
Language: English
Date: 1 September 2012
Journal or Publication Title: Advances in Science and Technology
Volume of the journal: 77
URL / URN: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258
Additional Information:

4th International Conference Smart Materials, Structures and Systems (CIMTEC), Montecatini Terme, Italy, 10.-14.06.2012

Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 19 Jun 2012 06:47
Last Modified: 07 May 2024 11:19
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