Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC)
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2011 |
| Creators: | Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications |
| Language: | English |
| Date: | 16 September 2011 |
| Journal or Publication Title: | Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC) |
| URL / URN: | http://dx.doi.org/10.1109/ESSDERC.2011.6044184 |
| Additional Information: | 41th European Solid-State Device Research Conference (ESSDERC), Helsinki, Finnland, 12.-16.09.2011 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 28 Sep 2011 06:06 |
| Last Modified: | 08 May 2024 08:09 |
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