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Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy

Vogt, Alexander ; Hartnagel, Hans L. ; Miehe, Gerhard ; Fuess, H. ; Schmitz, J. (1996)
Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy.
In: Journal of Vacuum Science and Technology B, 14
doi: 10.1116/1.588790
Article, Bibliographie

Item Type: Article
Erschienen: 1996
Creators: Vogt, Alexander ; Hartnagel, Hans L. ; Miehe, Gerhard ; Fuess, H. ; Schmitz, J.
Type of entry: Bibliographie
Title: Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy
Language: English
Date: 1996
Publisher: AIP Publishing
Journal or Publication Title: Journal of Vacuum Science and Technology B
Volume of the journal: 14
DOI: 10.1116/1.588790
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:00
Last Modified: 13 Dec 2023 14:29
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