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Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2004)
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, 72 (1-4)
Article, Bibliographie

Item Type: Article
Erschienen: 2004
Creators: Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo
Type of entry: Bibliographie
Title: Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes
Language: English
Date: 2004
Journal or Publication Title: Microelectronic Engineering
Volume of the journal: 72
Issue Number: 1-4
URL / URN: http://dx.doi.org/10.1016/j.mee.2004.01.002
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 05 Jul 2011 06:31
Last Modified: 26 Aug 2018 21:26
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