Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008)
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1016/j.mee.2007.03.008
| Item Type: | Article |
|---|---|
| Erschienen: | 2008 |
| Creators: | Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K |
| Language: | English |
| Date: | 30 March 2008 |
| Journal or Publication Title: | Microelectronic Engineering |
| Volume of the journal: | 85 |
| Issue Number: | 1 |
| URL / URN: | http://dx.doi.org/10.1016/j.mee.2007.03.008 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 01 Jul 2011 08:55 |
| Last Modified: | 22 May 2013 14:09 |
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