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Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio

Rispal, Lorraine ; Schwalke, Udo (2008)
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, 29 (12)
Article, Bibliographie

Item Type: Article
Erschienen: 2008
Creators: Rispal, Lorraine ; Schwalke, Udo
Type of entry: Bibliographie
Title: Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio
Language: English
Date: 7 November 2008
Journal or Publication Title: IEEE Electron Device Letters
Volume of the journal: 29
Issue Number: 12
URL / URN: http://dx.doi.org/10.1109/LED.2008.2005850
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 29 Jun 2011 10:20
Last Modified: 05 Mar 2013 09:50
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