Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1016/j.mee.2010.05.013
Item Type: | Article |
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Erschienen: | 2011 |
Creators: | Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo |
Type of entry: | Bibliographie |
Title: | Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties |
Language: | English |
Date: | December 2011 |
Journal or Publication Title: | Microelectronic Engineering |
Volume of the journal: | 88 |
Issue Number: | 12 |
URL / URN: | http://dx.doi.org/10.1016/j.mee.2010.05.013 |
Additional Information: | 6th International Symposium on Advanced Gate Stack Technology (ISAGST), San Francisco, CA, USA, 23.-26.08.2009 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Date Deposited: | 28 Jun 2011 14:32 |
Last Modified: | 08 May 2024 08:49 |
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