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Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Article, Bibliographie

Item Type: Article
Erschienen: 2011
Creators: Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo
Type of entry: Bibliographie
Title: Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties
Language: English
Date: December 2011
Journal or Publication Title: Microelectronic Engineering
Volume of the journal: 88
Issue Number: 12
URL / URN: http://dx.doi.org/10.1016/j.mee.2010.05.013
Additional Information:

6th International Symposium on Advanced Gate Stack Technology (ISAGST), San Francisco, CA, USA, 23.-26.08.2009

Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 28 Jun 2011 14:32
Last Modified: 08 May 2024 08:49
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