Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC). Arlington, VA, USA (03.-05.12.2009)
Conference or Workshop Item, Bibliographie
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2009 |
| Creators: | Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors |
| Language: | English |
| Date: | 5 December 2009 |
| Event Title: | 40th IEEE Semiconductor Interface Specialists Conference (SISC) |
| Event Location: | Arlington, VA, USA |
| Event Dates: | 03.-05.12.2009 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 28 Jun 2011 14:03 |
| Last Modified: | 22 May 2013 14:08 |
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