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Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2
Article, Bibliographie

Item Type: Article
Erschienen: 2007
Creators: Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo
Type of entry: Bibliographie
Title: Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data
Language: English
Date: 2007
Journal or Publication Title: Journal of Telecommunications and Technology
Volume of the journal: 2
URL / URN: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 28 Jun 2011 06:40
Last Modified: 26 Aug 2018 21:26
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