Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006)
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST). Austin, TX, USA (27.-29.09.2006)
Conference or Workshop Item, Bibliographie
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2006 |
| Creators: | Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics |
| Language: | English |
| Date: | 29 September 2006 |
| Event Title: | 3rd International Symposium on Advanced Gate Stack Technology (ISAGST) |
| Event Location: | Austin, TX, USA |
| Event Dates: | 27.-29.09.2006 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 28 Jun 2011 05:58 |
| Last Modified: | 22 May 2013 14:09 |
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