Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1149/1.2356289
| Item Type: | Article |
|---|---|
| Erschienen: | 2006 |
| Creators: | Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics |
| Language: | English |
| Date: | 3 November 2006 |
| Journal or Publication Title: | ECS Transactions |
| Volume of the journal: | 3 |
| Issue Number: | 2 |
| URL / URN: | http://dx.doi.org/10.1149/1.2356289 |
| Additional Information: | 210th Meeting of The Electrochemical Society, Cancun, Mexico, 29.10.-03.11.2006 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 27 Jun 2011 14:14 |
| Last Modified: | 08 May 2024 09:07 |
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