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Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2002)
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
IEEE Semiconductor Interface Specialist Conference. San Diego, CA, USA (05.-07.12.2002)
Conference or Workshop Item, Bibliographie

Item Type: Conference or Workshop Item
Erschienen: 2002
Creators: Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo
Type of entry: Bibliographie
Title: Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric
Language: English
Date: 7 December 2002
Event Title: IEEE Semiconductor Interface Specialist Conference
Event Location: San Diego, CA, USA
Event Dates: 05.-07.12.2002
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 27 Jun 2011 13:52
Last Modified: 05 Mar 2013 09:50
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