Klös, A. ; Kostka, A. (1996)
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling.
In: Solid state electronics, 39 (12)
doi: 10.1016/S0038-1101(96)00122-0
Article, Bibliographie
Abstract
In this paper we present a new theoretical approach in MOS modeling to derive analytical, physics-based model equations for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs. Our approach uses conformal mapping techniques to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account. The presented model consists of analytical equations in closed form and uses only physically meaningful parameters. Therefore, the results are not only useful in circuit simulators but also in calculations of scaling behavior, where planned processes can be investigated. Comparison with numerical device simulation results and measurements confirm the high accuracy of the presented model.
| Item Type: | Article |
|---|---|
| Erschienen: | 1996 |
| Creators: | Klös, A. ; Kostka, A. |
| Type of entry: | Bibliographie |
| Title: | A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling |
| Language: | English |
| Date: | 1 December 1996 |
| Publisher: | Elsevier |
| Journal or Publication Title: | Solid state electronics |
| Volume of the journal: | 39 |
| Issue Number: | 12 |
| DOI: | 10.1016/S0038-1101(96)00122-0 |
| Abstract: | In this paper we present a new theoretical approach in MOS modeling to derive analytical, physics-based model equations for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs. Our approach uses conformal mapping techniques to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account. The presented model consists of analytical equations in closed form and uses only physically meaningful parameters. Therefore, the results are not only useful in circuit simulators but also in calculations of scaling behavior, where planned processes can be investigated. Comparison with numerical device simulation results and measurements confirm the high accuracy of the presented model. |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 19 Nov 2008 16:00 |
| Last Modified: | 20 Jul 2023 12:11 |
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