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Domain switching anisotropy in textured bismuth titanate ceramics

Jones, Jacob L. ; Slamovich, Elliott B. ; Bowman, Keith J. ; Lupascu, Doru C. (2005)
Domain switching anisotropy in textured bismuth titanate ceramics.
In: Journal of Applied Physics, 98 (10)
doi: 10.1063/1.2128475
Article, Bibliographie

Abstract

In a poled ferroelectric ceramic, the probability of crystallographic poles oriented in any given specimen direction is the multiple of both the initial crystallographic texture and the domain switching fraction. In this paper, the non-180 degrees domain switching fraction is shown to be dependent on the initial crystallographic texture and poling direction in tape cast Na0.5Bi4.5Ti4O15 ceramics. The domain switching fraction is 0.18 out of a maximum of 0.50 when poled in a direction in which most of the possible ferroelastic structural distortions are oriented (tape casting plane) whereas no non-180 degrees domain switching is discernable when poled in a less-preferred direction. The mechanism for domain switching anisotropy in textured bismuth titanate ceramics is suggested to be the synergistic alignment of ferroelastic structural distortions, analogous to the mechanical clamping conditions in poling ferroelastic thin films. (c) 2005 American Institute of Physics.

Item Type: Article
Erschienen: 2005
Creators: Jones, Jacob L. ; Slamovich, Elliott B. ; Bowman, Keith J. ; Lupascu, Doru C.
Type of entry: Bibliographie
Title: Domain switching anisotropy in textured bismuth titanate ceramics
Language: English
Date: November 2005
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 98
Issue Number: 10
DOI: 10.1063/1.2128475
Abstract:

In a poled ferroelectric ceramic, the probability of crystallographic poles oriented in any given specimen direction is the multiple of both the initial crystallographic texture and the domain switching fraction. In this paper, the non-180 degrees domain switching fraction is shown to be dependent on the initial crystallographic texture and poling direction in tape cast Na0.5Bi4.5Ti4O15 ceramics. The domain switching fraction is 0.18 out of a maximum of 0.50 when poled in a direction in which most of the possible ferroelastic structural distortions are oriented (tape casting plane) whereas no non-180 degrees domain switching is discernable when poled in a less-preferred direction. The mechanism for domain switching anisotropy in textured bismuth titanate ceramics is suggested to be the synergistic alignment of ferroelastic structural distortions, analogous to the mechanical clamping conditions in poling ferroelastic thin films. (c) 2005 American Institute of Physics.

Uncontrolled Keywords: FERROELECTRIC THIN-FILMS; PIEZOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; GRAIN-ORIENTATION; LAYER-STRUCTURE; SOLID-SOLUTION
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 18 May 2011 15:20
Last Modified: 05 Mar 2013 09:47
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