Kim-Ngan, N.-T. H. ; Balogh, A. G. ; Havela, L. ; Gouder, T. (2010)
Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268 (11-12)
Article, Bibliographie
Abstract
Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of −200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at −200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2.
| Item Type: | Article |
|---|---|
| Erschienen: | 2010 |
| Creators: | Kim-Ngan, N.-T. H. ; Balogh, A. G. ; Havela, L. ; Gouder, T. |
| Type of entry: | Bibliographie |
| Title: | Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy |
| Language: | English |
| Date: | June 2010 |
| Publisher: | Elsevier Science Publishing Company |
| Journal or Publication Title: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| Volume of the journal: | 268 |
| Issue Number: | 11-12 |
| URL / URN: | http://www.sciencedirect.com/science/article/B6TJN-4YG7JPT-G... |
| Abstract: | Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of −200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at −200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2. |
| Uncontrolled Keywords: | Uranium nitride films; RBS; Sputtering; Ion beam mixing |
| Additional Information: | 19th International Conference on Ion Beam Analysis |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Material Analytics 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences |
| Date Deposited: | 09 Jul 2010 10:41 |
| Last Modified: | 05 Mar 2013 09:35 |
| PPN: | |
| Funders: | The financial support from German Academic Exchange Service (DAAD) – D/08/07729 project (between Germany and Poland) is highly acknowledged., A.G.B. acknowledges the financial support by German Research Foundation (DFG) – SFB-595 project., L.H. acknowledges the financial support by the Czech Research PlanMSM 0021620834 and the Grant No. IAA100100912. |
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