Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5)
Article, Bibliographie
Item Type: | Article |
---|---|
Erschienen: | 2007 |
Creators: | Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo |
Type of entry: | Bibliographie |
Title: | Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology |
Language: | English |
Date: | 2007 |
Journal or Publication Title: | Microelectronics Reliability |
Volume of the journal: | 47 |
Issue Number: | 4-5 |
URL / URN: | http://dx.doi.org/10.1016/j.microrel.2007.01.018 |
Additional Information: | 14th Workshop on Dielectrics in Microelectronics (WoDiM), Santa Tecla, Italien, 26.-28.06.2006 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Date Deposited: | 20 Nov 2008 08:28 |
Last Modified: | 08 May 2024 08:53 |
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