Buschmann, Veronique ; Rodewald, M. ; Fuess, H. ; van Tendeloo, G. ; Schäffer, C. (1999):
High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructures.
In: Journal of applied physics, 85, pp. 2119-2123. [Article]
| Item Type: | Article |
|---|---|
| Erschienen: | 1999 |
| Creators: | Buschmann, Veronique ; Rodewald, M. ; Fuess, H. ; van Tendeloo, G. ; Schäffer, C. |
| Title: | High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructures |
| Language: | English |
| Journal or Publication Title: | Journal of applied physics |
| Volume of the journal: | 85 |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Department of Earth Sciences (1999 merged into Department of Materials and Earth Sciences) |
| Date Deposited: | 19 Nov 2008 15:54 |
| License: | [undefiniert] |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum