Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1999)
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, 85 (5)
doi: 10.1063/1.369590
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 1999 |
| Creators: | Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. |
| Type of entry: | Bibliographie |
| Title: | Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule |
| Language: | English |
| Date: | 1 March 1999 |
| Journal or Publication Title: | Journal of Applied Physics |
| Volume of the journal: | 85 |
| Issue Number: | 5 |
| DOI: | 10.1063/1.369590 |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 19 Nov 2008 15:54 |
| Last Modified: | 20 Feb 2020 13:28 |
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