Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. (2007)
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, 11 (4)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1149/1.2779556
| Item Type: | Article |
|---|---|
| Erschienen: | 2007 |
| Creators: | Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. |
| Type of entry: | Bibliographie |
| Title: | The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation |
| Language: | English |
| Date: | 12 October 2007 |
| Journal or Publication Title: | ECS Transactions |
| Volume of the journal: | 11 |
| Issue Number: | 4 |
| URL / URN: | http://dx.doi.org/10.1149/1.2779556 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:27 |
| Last Modified: | 20 Feb 2020 13:23 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum