Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard (2007)
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2007 |
| Creators: | Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard |
| Type of entry: | Bibliographie |
| Title: | New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon |
| Language: | English |
| Date: | 21 September 2007 |
| Journal or Publication Title: | Book of Abstracts: E-MRS Fall Meeting 2007 |
| Additional Information: | E-MRS Fall Meeting, Warschau, Polen, 17.-21.09.2007 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:26 |
| Last Modified: | 08 May 2024 08:32 |
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