Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo (2007)
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2007 |
| Creators: | Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process |
| Language: | English |
| Date: | 11 November 2007 |
| Journal or Publication Title: | Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007 |
| URL / URN: | http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93... |
| Additional Information: | 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, Veldhoven, Niederlande, 29.-30.11.2007 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:26 |
| Last Modified: | 08 May 2024 09:10 |
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