Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2006 |
| Creators: | Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results |
| Language: | English |
| Date: | 15 September 2006 |
| Journal or Publication Title: | Japanese Journal of Applied Physics |
| Additional Information: | 2006 International Conference on Solid State Devices and Materials (SSDM), Yokohama, Japan, 13.-15.09.2006 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:26 |
| Last Modified: | 08 May 2024 08:18 |
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