Schwalke, Udo (2006)
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2006 |
| Creators: | Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K |
| Language: | German |
| Date: | 24 November 2006 |
| Journal or Publication Title: | Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) |
| Additional Information: | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), Veldhoven, Niederlande, 23.-24.11.2006 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:26 |
| Last Modified: | 08 May 2024 08:50 |
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