Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003)
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2003 |
| Creators: | Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino |
| Type of entry: | Bibliographie |
| Title: | Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study |
| Language: | English |
| Date: | 2003 |
| Journal or Publication Title: | Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD) |
| Event Title: | International Workshop on Physics of Semiconductor Devices (IWPSD) |
| Event Location: | Madras, Indien |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:24 |
| Last Modified: | 20 Feb 2020 13:26 |
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