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Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Article, Bibliographie

Item Type: Article
Erschienen: 2005
Creators: Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo
Type of entry: Bibliographie
Title: Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process
Language: English
Date: July 2005
Journal or Publication Title: Journal of Non-Crystalline Solids
Volume of the journal: 351
Issue Number: 21-23
URL / URN: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:24
Last Modified: 20 Feb 2020 13:24
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