Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo (2005)
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD)
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2005 |
| Creators: | Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates |
| Language: | English |
| Date: | 24 May 2005 |
| Journal or Publication Title: | Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD) |
| Additional Information: | 1st International Conference on Memory Technology and Design (ICMTD), Giens, Frankreich, 21.-24.05.2005 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:21 |
| Last Modified: | 08 May 2024 08:39 |
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