Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2004)
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST)
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2004 |
| Creators: | Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs |
| Language: | English |
| Date: | 17 September 2004 |
| Journal or Publication Title: | Proceedings of the 3rd International Conference on Semiconductor Technology (ICST) |
| Additional Information: | 3rd International Conference on Semiconductor Technology (ICST), Shanghai, China, 15.-17.09.2004 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:20 |
| Last Modified: | 08 May 2024 08:23 |
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