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Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes

Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, 94 (10)
Article, Bibliographie

Item Type: Article
Erschienen: 2003
Creators: Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo
Type of entry: Bibliographie
Title: Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes
Language: English
Date: November 2003
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 94
Issue Number: 10
URL / URN: http://dx.doi.org/10.1063/1.1621718
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:18
Last Modified: 20 Feb 2020 13:25
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