Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004)
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Article, Bibliographie
| Item Type: | Article |
|---|---|
| Erschienen: | 2004 |
| Creators: | Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs |
| Language: | English |
| Date: | 5 November 2004 |
| Journal or Publication Title: | Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices |
| Additional Information: | SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, Austin, TX, USA, 04.-05.11.2004 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:18 |
| Last Modified: | 07 May 2024 10:52 |
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