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Large signal properties of AlGaN/GaN HEMTs on high resistivity substrates grown by MBE

Sutton, W. ; Pavlidis, Dimitris ; Lahrèche, H. ; Damilano, B. ; Langer, R. (2003):
Large signal properties of AlGaN/GaN HEMTs on high resistivity substrates grown by MBE.
In: GAAS, European Gallium Arsenide and Other Compound Semiconductors Application Symposium <11, 2003, München>: Proceedings ...- London: Horizon House Publ., 2003.- 540 S.- ISBN 1-580-53837-1, London, Horizon House Publ., [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2003
Creators: Sutton, W. ; Pavlidis, Dimitris ; Lahrèche, H. ; Damilano, B. ; Langer, R.
Title: Large signal properties of AlGaN/GaN HEMTs on high resistivity substrates grown by MBE
Language: English
Series Name: GAAS, European Gallium Arsenide and Other Compound Semiconductors Application Symposium <11, 2003, München>: Proceedings ...- London: Horizon House Publ., 2003.- 540 S.- ISBN 1-580-53837-1
Place of Publication: London
Publisher: Horizon House Publ.
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 20 Nov 2008 08:18
License: [undefiniert]
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