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A comparison of low frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors

Hsu, S. S. H. ; Pavlidis, Dimitris (2003):
A comparison of low frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors.
50, In: IEEE Transactions on Electron Devices, (9), pp. 1974-1982. IEEE, ISSN 1557-9646,
DOI: 10.1109/TED.2003.815367,
[Article]

Item Type: Article
Erschienen: 2003
Creators: Hsu, S. S. H. ; Pavlidis, Dimitris
Title: A comparison of low frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors
Language: English
Journal or Publication Title: IEEE Transactions on Electron Devices
Volume: 50
Number: 9
Publisher: IEEE
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
Date Deposited: 19 Nov 2008 16:28
DOI: 10.1109/TED.2003.815367
License: [undefiniert]
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