Herrmann, A. M. ; Wang, Y.-T. ; Ramakrishnan, P. A. ; Balzar, D. ; An, L. ; Haluschka, C. ; Riedel, R. (2001)
Structure and electronic transport properties of Si-(B)-C-N ceramics.
In: Journal of the American Ceramic Society, 84 (10)
Article, Bibliographie
Abstract
The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.
| Item Type: | Article |
|---|---|
| Erschienen: | 2001 |
| Creators: | Herrmann, A. M. ; Wang, Y.-T. ; Ramakrishnan, P. A. ; Balzar, D. ; An, L. ; Haluschka, C. ; Riedel, R. |
| Type of entry: | Bibliographie |
| Title: | Structure and electronic transport properties of Si-(B)-C-N ceramics |
| Language: | English |
| Date: | October 2001 |
| Publisher: | Wiley |
| Journal or Publication Title: | Journal of the American Ceramic Society |
| Volume of the journal: | 84 |
| Issue Number: | 10 |
| Abstract: | The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor. |
| Uncontrolled Keywords: | structure, electrical properties, silicon |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids |
| Date Deposited: | 19 Nov 2008 16:27 |
| Last Modified: | 20 Feb 2020 13:27 |
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