Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha (2021)
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors.
International Workshop on Mobile Terahertz Systems (IWMTS). Essen, Germany (05.-06.07.2021)
doi: 10.1109/IWMTS51331.2021.9486796
Conference or Workshop Item, Bibliographie
This is the latest version of this item.
Abstract
Field effect transistor (FET) based terahertz rectifiers are promising candidates for sensitive, room-temperature operated high speed (THz) detectors, e.g. in communication, medical, biochemical, security, quality control applications, or beam diagnostic applications at particle accelerators. This paper investigates the equivalent circuit in the intermediate frequency band from 0.1 to 65 GHz with S-parameter measurements in order to enable implementation with high speed post detection electronics. Preliminary results are obtained by de-embedding On-Wafer measurements and compared with theoretical expectations from hall measurements and a simplified equivalent circuit. The knowledge of the channel behavior and impedance is mandatory for impedance matching to IF circuitry in advanced detector designs.
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2021 |
| Creators: | Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha |
| Type of entry: | Bibliographie |
| Title: | Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Publisher: | IEEE |
| Book Title: | 2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS) |
| Collation: | 6 Seiten |
| Event Title: | International Workshop on Mobile Terahertz Systems (IWMTS) |
| Event Location: | Essen, Germany |
| Event Dates: | 05.-06.07.2021 |
| DOI: | 10.1109/IWMTS51331.2021.9486796 |
| Corresponding Links: | |
| Abstract: | Field effect transistor (FET) based terahertz rectifiers are promising candidates for sensitive, room-temperature operated high speed (THz) detectors, e.g. in communication, medical, biochemical, security, quality control applications, or beam diagnostic applications at particle accelerators. This paper investigates the equivalent circuit in the intermediate frequency band from 0.1 to 65 GHz with S-parameter measurements in order to enable implementation with high speed post detection electronics. Preliminary results are obtained by de-embedding On-Wafer measurements and compared with theoretical expectations from hall measurements and a simplified equivalent circuit. The knowledge of the channel behavior and impedance is mandatory for impedance matching to IF circuitry in advanced detector designs. |
| Classification DDC: | 500 Science and mathematics > 530 Physics 600 Technology, medicine, applied sciences > 621.3 Electrical engineering, electronics |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
| Date Deposited: | 02 Aug 2024 12:54 |
| Last Modified: | 02 Aug 2024 12:54 |
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| Suche nach Titel in: | TUfind oder in Google |
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Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors. (deposited 12 Jul 2023 13:13)
- Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors. (deposited 02 Aug 2024 12:54) [Currently Displayed]
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