Kurdi, Samer ; Sakuraba, Yuya ; Masuda, Keisuke ; Tajiri, Hiroo ; Nair, Bhaskaran ; Nataf, Guillaume F. ; Vickers, Mary E. ; Reiss, Günter ; Meinert, Markus ; Dhesi, Sarnjeet S. ; Ghidini, Massimo ; Barber, Zoe H. (2022)
Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film.
In: Journal of Physics D: Applied Physics, 55 (18)
doi: 10.1088/1361-6463/ac4e32
Article, Bibliographie
This is the latest version of this item.
Abstract
In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn₂FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L2₁ B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L2₁ B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L2₁ B structure. To realize a half-metallic Mn₂FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder.
| Item Type: | Article |
|---|---|
| Erschienen: | 2022 |
| Creators: | Kurdi, Samer ; Sakuraba, Yuya ; Masuda, Keisuke ; Tajiri, Hiroo ; Nair, Bhaskaran ; Nataf, Guillaume F. ; Vickers, Mary E. ; Reiss, Günter ; Meinert, Markus ; Dhesi, Sarnjeet S. ; Ghidini, Massimo ; Barber, Zoe H. |
| Type of entry: | Bibliographie |
| Title: | Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film |
| Language: | English |
| Date: | 2022 |
| Place of Publication: | Darmstadt |
| Publisher: | IOP Publishing |
| Journal or Publication Title: | Journal of Physics D: Applied Physics |
| Volume of the journal: | 55 |
| Issue Number: | 18 |
| Collation: | 10 Seiten |
| DOI: | 10.1088/1361-6463/ac4e32 |
| Corresponding Links: | |
| Abstract: | In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn₂FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L2₁ B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L2₁ B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L2₁ B structure. To realize a half-metallic Mn₂FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder. |
| Uncontrolled Keywords: | Heusler alloy, spintronics, x-ray absorption spectroscopy, x-ray diffraction, x-ray magnetic circular dichroism, spin polarization, thin films |
| Classification DDC: | 500 Science and mathematics > 530 Physics 500 Science and mathematics > 540 Chemistry 600 Technology, medicine, applied sciences > 620 Engineering and machine engineering |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > New Materials Electronics |
| Date Deposited: | 02 Aug 2024 12:42 |
| Last Modified: | 02 Aug 2024 12:42 |
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Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film. (deposited 11 Jul 2022 13:46)
- Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film. (deposited 02 Aug 2024 12:42) [Currently Displayed]
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